Abstract
We extend our previous semi-empirical model for quantum transport in a conventional nano-MOSFET to FDSOI transistors. In ultra-thin-body and -BOX (UTBB) FDSOI transistors, the electron channel can be treated as an electron waveguide. In the abrupt transition approximation, it is possible to derive an analytical approximation for the potential seen by the charge carriers. With these approximations we calculate the threshold voltage and the transfer characteristics, finding remarkably good agreement with experiments in the OFF-state given the relative simplicity of our model. In the ON-state, our theory fails because Coulomb interaction between the free charge carriers and the device heating is neglected in our approach.
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