Abstract
An electrochemical method for the preparation of GaSb polycrystalline thin films is presented involving sequential deposition of Sb and Ga films (from an acid SbCl3 solution and an alkaline GaCl3 solution respectively) and a mild thermal annealing. The annealed deposits were characterized by X-ray diffraction, scanning electron microscopy, energy dispersive X-ray analysis (EDAX) and secondary ion mass spectrometry. An alternative approach based on the simultaneous deposition of Sb and Ga was unsuccessful.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
