Abstract
This paper develops a rapid algorithm to extract the Young's modulus and residual stress of structural material of capacitive micro-device from measuring the pre-pull-in capacitance variation of the micro test beam made of the material to be tested. The extracted Young's modului and residual stresses of demonstrated samples agree very well with the experimental measurement. The present method is expected to be applicable to the wafer-level testing in micro-device manufacture and compatible with the wafer-level testing in IC industry since the test and pick-up signals are both electrical.
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