Abstract

This paper proposes an area efficient, low power, fractional CMOS bandgap reference (BGR) utilizing switched-current and current-memory techniques. The proposed circuit uses only one parasitic bipolar transistor and built-in current source to generate reference voltage. Therefore significant area and power reduction is achieved, and bipolar transistor device mismatch is eliminated. In addition, output reference voltage can be set to almost any value. The proposed circuit is designed and simulated in 0.18µm CMOS process, and simulation results are presented. With a 1.6V supply, the reference produces an output of about 628.5mV, and simulated results show that the temperature coefficient of output is less than 13.8ppm/°C in the temperature range from 0°C to 100°C. The average current consumption is about 8.5µA in the above temperature range. The core circuit, including current source, opamp, current mirrors and switched capacitor filters, occupies less than 0.0064mm2 (80µm × 80µm).

Full Text
Paper version not known

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call

Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.