Abstract
This paper describes a method to determine the small-signal equivalent circuit model elements for Double Heterojunction δ-doped PHEMTs, which combines the analytical approach and empirical optimization procedure. The PAD capacitances are determined by measuring an open structure which consists of only the pads. Intrinsic elements determined by a conventional analytical parameter transformation technique are described as function of extrinsic elements. Variation ranges of extrinsic elements for optimization are obtained by using coldfet method. An excellent fit between measured and simulated S-parameters in the frequency range of 2-110GHz is obtained for 2×100um gate width (number of gate fingers × unit gate width) DH PHEMT.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: International Journal of Infrared and Millimeter Waves
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
