Abstract
Reports an analytical model for SiGe-base HBTs with a graded germanium profile in the base region and its effects on the rise time in a related BiCMOS inverter circuit. According to the model results, for an HBT with a graded germanium profile, a peak germanium concentration of 15% at the base/collector junction is sufficient to generate an optimized forward transit time. For a BiCMOS inverter using linearly graded SiGe-base HBT's with a peak germanium concentration larger than 15% at the base/collector, its rise time is not strongly correlated to its peak germanium concentration.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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