Abstract
An analytical model of the energy distribution of hot electrons in semiconductors is presented. It is derived under the simplifying assumptions of a single nonparabolic conduction band, small space derivative of the external electric field, and emission of optical phonons as the dominant energy loss mechanism. The model, indicating that band nonparabolicity makes the electron energy distribution deviate markedly from the Maxwellian low-field case, is shown to be applicable to the case of silicon MOSFETs by means of comparisons with Monte Carlo simulations.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
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