Abstract
A closed-form analytical expression is derived to predict the threshold voltage of an ion-implanted narrow-width MOSFET. The method makes use of the Fourier transform to analyse the voltage distribution in the width cross section of the basic MOS device structure. No fitting parameter is necessary, but the dependence of threshold voltage on channel width and substrate bias thus obtained is in reasonable agreement with numerical results. The effects of peak doping, straggle and range of the implantation on the threshold voltage are also taken into account.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
