An AlGaN/GaN two‐color photodetector based on an AlGaN/GaN/SiC HEMT layer structure

Abstract

AbstractThe optoelectronic properties of MSM diodes that are based on an AlGaN/GaN HEMT layer system are investigated as function of the applied bias. For low voltages, the two‐dimensional electron gas acts as a barrier for the depletion layer. Therefore, only the upper AlGaN barrier layer contributes to the photocurrent. In the high voltage regime the depletion region penetrates the GaN buffer that adds the spectral responsivity of GaN to the pure AlGaN behaviour in the low voltage regime. The ratio of the responsivities at 350 nm and 300 nm wavelength can be switched from 0.01 at 2.5 V to 0.8 at 4 V bias. This property makes the MSM‐2DEG a candidate for use as two‐color photodetector. Device fabrication uses standard HEMT processing steps, allowing integration in HEMT circuits without the need of sophisticated growth or etching techniques. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)