Abstract
We fabricated 70 nm Al2O3 gated field effect transistors based on two-dimensional (2D) materials and characterized their optical and electrical properties. Studies show that the optical contrast of monolayer graphene on an Al2O3/Si substrate is superior to that on a traditional 300 nm SiO2/Si substrate (2.4 times). Significantly, the transconductance of monolayer graphene transistors on the Al2O3/Si substrate shows an approximately 10-fold increase, due to a smaller dielectric thickness and a higher dielectric constant. Furthermore, this substrate is also suitable for other 2D materials, such as WS2, and can enhance the transconductance remarkably by 61.3 times. These results demonstrate a new and ideal substrate for the fabrication of 2D materials-based electronic logic devices.
Highlights
Two-dimensional (2D) materials, such as graphene and transition-metal dischalcogenides (TMDs), have attracted tremendous interest for possible applications in transistors [1,2,3,4], photodetectors [5,6], and touch panels [7,8] owing to their extraordinary properties
The Si surface is extremely smooth after HF treatment
As shoAwl2nO3ifnilmFiigsu1.r2e6 n2ma,. the Al2O3 film is uniform over a large area (50 μm × 50 μm)
Summary
Two-dimensional (2D) materials, such as graphene and transition-metal dischalcogenides (TMDs), have attracted tremendous interest for possible applications in transistors [1,2,3,4], photodetectors [5,6], and touch panels [7,8] owing to their extraordinary properties. Most efforts to date employ a 300 nm thick silicon dioxide (SiO2) substrate as the gate dielectric layer. The devices fabricated on SiO2/Si substrates lack enough capability to regulate the Fermi surface of samples, requiring higher back-gate voltage [15].
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