Abstract
In this article, an accurate representation of threshold voltage for double metal double gate (DMDG) device structure has been initiated. It is the lowest gate-source electromotive force at which the device can kick off to conduct. This paper also deliberates a comparison between the high-k medium and SiO2 as an oxide substance along with that considers the gate stack concept. Use of a promising high-k substance HfO2, reduces the small channel effect which is generated due to downsizing the device. The main challenge is to overcome the short channel effect that is generated due to scaling down the device. The model has been established by varying several criteria like channel length, film thickness, oxide thickness, temperature change, work function difference and drain source voltage. So that a clear reflection can be seen how the threshold voltage changes with several parameters. For all the cases, the implementations with high-k material show better execution in case of reducing short channel effects (SCEs) that are mainly generated due to reducing the device structure. In this article, the drain induced barrier lowering (DIBL) and subthreshold swing (SS) have also been modelled for the device structure. Extreme conformity can be noticed between the analytical model and TCAD result.
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