Abstract
A drain current model of 2-D monolayer (ML) transition-metal dichalcogenide (TMD) tunnel FETs (TFETs) is proposed. For better accuracy, the proposed model features the following two points: 1) the accurate lateral energy profiles considering the extension of the depletion width ( ${W}_{d}$ ) owing to the reduced dimensionality and 2) the spin- and valley-dependent complex band structure considering the spin-orbit coupling effect. The proposed model is validated by the tight-binding nonequilibrium green function simulation, in the case of ML MoS2 double-gate TFETs. By using the proposed model, the design guideline of ML TMD TFETs is presented.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
