Abstract
In this paper, the design and performance of a three-stage Ka-Band balanced high power amplifier (HPA) MMIC are presented. The proposed HPA utilizes the 150-nm GaN-SiC HEMT process and self-developed empirical model. By incorporating wideband matching networks and Lange couplers, large saturated output power, high gain, and good matching conditions are realized simultaneously. Simulated in continuous-wave (CW) operation, the proposed MMIC enjoys 20 dB gain covering 3-dB bandwidth of 32~36 GHz with better than -8 dB impedance matching. For large-signal performance, 11 W peak output power (Psat) associated with 24% power-added-efficiency (PAE) is achieved at 34.2 GHz. The die size of the proposed HPA core is 3.5×4.0 mm.
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