Abstract
AbstractWe report on the development of amplitude modulated step‐scan Fourier‐transform photocurrent spectroscopy (AMFTPS) as a sensitive tool for detecting shallow and deep electronic states in high resistive semiconductors. We present fundamental aspects of dual beam photoconductivity (DBP) and AMFTPS and apply these methods to detect the defect‐induced localized electronic levels in the energy gap of boron doped epitaxial CVD diamond thin films grown on single crystalline type Ib (111) oriented diamond substrates. The mechanism of acceptor passivation upon oxygen addition during CVD growth in B‐doped films is discussed. (© 2007 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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