Abstract
This paper is concerned with modulation of the r.f. skin depth in high-purity bismuth at 4.2°K by an applied magnetic field. A disk or cylinder of bismuth is placed so as to affect the coupling between two coils, one of which is excited with an a.c. carrier signal. The skin depth associated with this carrier signal in the bismuth element is then modulated by a quasistatic or low-frequency a.c. magnetic field. The signal appearing across the secondary coil is thus a function of the applied magnetic field. With the purest bismuth elements, large changes in secondary voltage are achieved with magnetic field excursions of less than 100 G. This effect is shown to result mainly from magnetoconductivity for which high-purity bismuth at low temperatures is ideally suited, since carrier mobilities are quite high (on the order of 10 7 cm 2/V-sec).
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