Abstract
Thin films of three layers (p-type/i-type/n-type) amorphous silicon (a-Si:H) and boron phosphide (BP) were investigated by means of Fourier transform infra-red (FTIR) spectroscopy and electron spin resonance (ESR). The formation ratio of (B-H)/(P-H) bonds in BP film, as functions of SiH, and PH3 gas flows, was evaluated by magnitude of stretching vibration. As for a-Si, higher order bond of-(Si-H2)-n, which may deteriorate the efficiency of solar energy conversion (ESEC), was distinguishable from Si-H single bond. The number of unpaired electron spins formed in 5 % ESEC a-Si:H, 7.99-1013 (spin/gram), was 73% larger than that in 8% ESEC a-Si:H.
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