Abstract
Silicon nitride thin films are obtained using two different plasma-enhanced chemical vapour deposition devices. In the first, these thin films are created in a d.c. discharge in an ArSi H 4N 2 gas mixture whereas, in the second, active nitrogen species are selectively produced in a flowing nitrogen post-discharge and then reacted with silane in a reaction region where is positioned the substrate. In both cases, the films obtained are substoichiometric in nitrogen. Their characteristics, morphology, structure and composition are studied and compared, and simplified models of film growth are proposed.
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