Abstract
Amorphous hydrogenated silicon nitride (a-SiNx:H) films of different compositions (0⩽x⩽1.18) were prepared by pulsed glow discharge plasma immersion ion implantation and deposition. The processing gases were silane and nitrogen at a substrate temperature ⩽50°C. The properties of the films were investigated using Rutherford backscattering, elastic recoil detection analysis, UV–visible optical absorption, Fourier transform infrared, and Raman spectroscopies, and nanoindentation. Depending on the value of x, the band gap of the films changes from 1.54to4.42eV, and hardness changes from 11.2to15.3GPa. Changes in the film properties are caused by formation of Si–N bonds and by reducing disorder in the films. It is shown that hard and transparent silicon nitride films can be obtained at room temperature.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
