Abstract
Hydrogenated amorphous silicon-carbon (a-SiC) films were fabricated using a novel plasma CVD method, called the CPM (Controlled Plasma Magnetron) method. The films obtained had a large Si-C bond density and a low Si-H bond density. The absorption coefficient at the photon energy level of 2.5 to 3.5 eV for these films was one order of magnitude lower than that for conventional a-SiC films. Furthermore, the dark conductivity of boron-doped films increased to more than 10-4 (Ω·cm)-1, which is the highest value achieved for a-SiC with a carbon content of 55%.
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