Abstract
This paper reports the study of amorphous semiconductor devices of memory and threshold types. Measurements have been made on As Ge10 Te90- glasses, silver dpoed As10 Ge15 Te75 glass with silver concentrations from 0 to 10.0 at.% and Se20 Ge20 Te60 and Se20 Ge20 T55 glasses. The I—V characteristics in the OFF state of the materials have been studied at temperature 30,50, 60, 80 and 100°C. The threshold voltages of switching and their variation with temperature, composition and silver content have been studied. Measurements reveal that (i) the I—V characteristics over a wide range of temperature can be normalized into a single curve, (ii) the threshold voltage of switching decreases exponentially with the increase of temperature, (iii) the ratio of activation energy of dc conductivity to that of switching is of the order of two for all these glasses, (iv) the threshold voltage of switching is well correlated with the glass transition temperature, (v) Silver doping does not change the basic behaviour of As-Ge-Te glasses, and (vi) the switching mechanism in both memory and threshold devices studied, appears to be initiated by a thermal process with possible electronic contribution.
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