Amorphous GaN Grown by Room Temperature Molecular Beam Epitaxy

Abstract

Amorphous GaN films were grown at room temperature by molecular beam epitaxy on the oxide layer of GaAs(001) substrates. Their properties were investigated by transmission electron microscopy/diffraction and micro-Raman spectroscopy. A broad Raman peak at 650 cm-1 identifies the amorphous GaN. The results suggest that the local short-range bonding structure in amorphous GaN is different from crystalline GaN supporting theoretical predictions [Stumm and Drabold: Phys. Rev. Lett. 79 (1997) 677] that amorphous GaN is attractive for device applications.