Abstract
The application of carbon nitride as a barrier against copper diffusion was investigated. Amorphous carbon nitride (a-CN) thin films were prepared on Si(100) substrates by rf magnetron sputtering of graphite target in N2 plasma. A thin Cu layer was then deposited in-situ atop of the a-CN film. Annealing process was carried out in nitrogen (N2) ambient at the temperature of 400°C and 600°C respectively. The as-deposited and annealed films were characterized by x-ray photoelectron spectroscopy (XPS). The measurements show that both sp2C-N and sp3-N bonds were formed in the as-deposited carbon nitride films. The compositional analyses indicate that the deposited a-CN thin film is able to act as an effective diffusion barrier against copper at annealing temperature up to 400°C.
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