Abstract
Amorphous carbon nitride (aCNx) films were prepared by pulsed laser ablation of graphite in N2 RF plasma. The film property was compared with that prepared in N2 gas. The N2 plasma was generated by a mesh electrode, which was inserted between a graphite target and a Si substrate. The gas pressure pN2 was varied from 10 to 100 mTorr. The film deposition rate exponentially decreased with pN2 for both the plasma and gas environment. X-ray photoelectron spectroscopy analysis showed that the ratio of nitrogen content to the carbon one ([N]/[C]) of the aCNx film surface deposited in the N2 plasma was ∼2 times higher than that obtained in the N2 gas. The film structure was shown by Raman spectroscopy analysis that sp2 clustering was enhanced with increasing the [N]/[C]. The effect of plasma on aCNx film deposition was discussed.
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