Abstract
Electrical probe memory using Ge2Sb2Te5 media has been considered a promising candidate in the future archival storage market due to its potential for ultra-high density and long data retention time. However, most current research efforts have been devoted to the writing of crystalline bits using electrical probe memory while ignoring the viability of writing amorphous bits. Therefore, this paper proposes a physical, realistic, full three-dimensional model to optimize the practicable media stack by spatially and temporally calculating temperature distributions inside the active media during the writing of amorphous bits. It demonstrates the feasibility of using an optimized device that follows a Silicon/Titanium Nitride/Ge2Sb2Te5/Diamond-Like Carbon design with appropriate electro-thermal properties and thickness to achieve ultra-high density, low energy consumption, and a high data rate without inducing excessive temperature. The ability to realize multi-bit recording and rewritability using the designed device is also proven, making it attractive and suitable for practicable applications.
Highlights
Data storage devices play a crucial role in citizens’ daily life as a result of the proliferation of computerized data triggered by the global digitalization storm
Electrical probe memory has been considered as one of the most promising storage devices for the future archival storage application due to its superior recording and replay performances when compared to its predecessors [1]
Electrical probe memory usually comprises a conductive probe tip that serves as the top electrode, a storage stack that consists of a Chalcogenide alloy (e.g., Ge2Sb2Te5 media) surrounded by a protective capping layer and a bottom electrode, both of which are deposited into the silicon (Si) wafer
Summary
Data storage devices play a crucial role in citizens’ daily life as a result of the proliferation of computerized data triggered by the global digitalization storm. Global digital data has increased at an unprecedented rate, much higher than that of conventional data storage devices such as the magnetic hard disk, magnetic tape, and optical disc. The replay process is accomplished by applying a low readout voltage through the conductive tip to the storage stack and, subsequently, sensing the readout current variations caused by the large resistance contrast between crystalline/amorphous marks and their respective background. These variations can be further adjusted by reversing the bias voltages which are linked to the solid-state electrolytic behavior [2]
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