Abstract
An empirical recipe for the amorphisation of single crystal silicon by bombardment with the group IV ions: Si + , Ge + , Sn + and Pb + , has been developed. Samples amorphised using 29 Si + ions were implanted with boron (25 keV, 10 15 ions cm −2 ) and annealed using conventional furnace techniques. Ion channelling and sheet resistivity measurements indicate that good regrowth and complete activation of the shallow doped layers can be obtained provided amorphisation is complete. Similar results were also obtained using 70 Ge + and 118 Sn + implants.
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