Abstract
A single pot synthesis method of aminobenzene stabilized bismuth iodide particles (ABBI) is reported for the nonvolatile random access memory application. The microscopic and surface property of the as-synthesized organic-inorganic hybrid system has been characterized using different techniques. The current-voltage characteristic of the device, made with ABBI, exhibited O-shaped hysteresis behaviour. For the random access memory application, the device was demonstrated the steady endurance and retention for 103 times and 2×103 sec, respectively. The charge transport property of the device was followed by space charge limited current and trapped assisted tunneling mechanism.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
