Abstract
AbstractZinc diffusion from the vapour phase on a previously grown LPE nAlxGa1–xAs/nGaAs sample is discussed for thin window concentrator solar cell manufacture. A high cell shunt resistance and a low series resistance are achieved together with improved optical parameters via an impressed electric field in the emitter. Dark current components are rather low and 21.8% conversion efficiency is measured at AM 1.3. When the photogenerated short circuit current density is 8 A · cm−2, the fill factor is 0.77 and open circuit voltage is 1140 mv.
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