Abstract
Aluminum doped ZnO thin films were grown using chemical spray pyrolysis. The doped films showed only blue and UV photoluminescence at room temperature. The position of the near band edge emission was found to agree with the theoretical value of ZnO nanocrystal band gap. The full width at half maximum for the near band edge emission at room temperature was found to be ~ 100 meV, which indicated films to be of very good device quality. The presence of a weak photoluminescence at 3.08 ± 0.02 eV in the films was assigned to defect related emission. We had shown in this report that it was possible to increase the efficiency of the photoluminescence by increasing the substrate temperature used for film growth. The optimized films showed resistivity of 1.5 × 10﹣2 Ω·cm.
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