Abstract
In the present work, alumina gel was developed for passivating silicon wafers. The alumina gel was prepared by sol–gel method with aluminum sec-butoxide as precursor. After coating, rapid thermal process (RTP) was conducted to activate the passivation effect. X-ray photoelectron spectroscopy and C–V curve were executed to evaluate film properties. The peak at 74.35 eV confirmed the formation of Al2O3. Meanwhile, a small peak at low binding energy decreased with the growth of annealing temperature, which was ascribed to the escape of hydrogen, leading to the decline of effective lifetime after 700 °C. The highest fixed charge (Qf) of − 1.16e12 cm−2 and superior interface defect density at mid gap (Dit) of 1.98e12 cm−2eV−1 were obtained at the annealing temperature of 700 °C, contributing to the highest effective minority carrier lifetime of 292 µs. The present work will be helpful to provide a more cost-effective technique for Al2O3 passivation.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callMore From: Journal of Materials Science: Materials in Electronics
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
