Abstract
The main development issue for EUV resists is how to concurrently achieve high sensitivity, resolution below 22-nm half-pitch (hp), and low line width roughness (LWR) in the required fine patterns. Sensitivity and resolution continue to be improved through advances in EUV resist material research. However, through the material-approach, LWR remains a difficult issue. Thus, LWR-reduction from the point of view of alternative resist processes was investigated. As a result, LWR improvement was obtained utilizing alternative developer and rinse solutions. However, a difference in the LWR-reduction effect of these processes depending on the type of resist material used was observed.
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