Abstract
To produce high performance optoelectronic devices, ternary alloys prepared by indium (In), antimony (Sb), tin (Sn) and sulphur (S), the InxSn1−xS2 and SbxSn1−xS2 (x = 0, 0.05, 0.15), are exploited for their application in moderately fast photodetection. The single crystals of InxSn1−xS2 and SbxSn1−xS2 (x = 0, 0.05, 0.15) alloys are grown by direct vapour transport technique. The photodetectors based on single crystals are examined for 670 nm illumination having power intensity of 3 mW/cm2. For quantitative analysis, the typical detector parameters such as photo-responsivity, specific detectivity and external quantum efficiency are calculated. The improvement in photodetection with significantly enhanced detector parameters and fast a response is realized due to doping in SnS2. The highest responsivity of 15.48 mA/W with response time of 240 ms is achieved in Sb0.15Sn0.85S2 alloy. The present findings of enhanced photodetection due to alloy engineering can be of great advantage in intended applications of these compounds in the field of optoelectronics.
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