Abstract
A deep ultraviolet light-emitting diode (DUV LED) consisting of a specifically designed intermediate p-type region involving a superlattice quaternary nitride alloy has been proposed. The light output power of the proposed structure has been found significantly large; around 28.30 times high in comparison to the conventional structure, at the current density of 200 A/cm2. The maximum internal quantum efficiency of the proposed structure is 153.63% higher compared to the conventional one. Moreover, the efficiency droop has been reduced by 99.08%. Absence of abrupt potential barrier owing to the strain compensation provided by the superlattice p-AlInGaN layer offers an attractive solution for enhancing the hole injection into the active region leading to the improvement in performance of DUV LED.
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