Abstract
Liquid crystal (LC) alignment layers were prepared by fabricating solution-processed HfZnO films, annealing them, and treating them with ion beam (IB) irradiation, and the effect of annealing temperature upon the resulting film properties was studied. Homogeneous LC alignment was achieved on IB-irradiated HfZnO films. Topographical changes were observed from field-emission scanning electron microscopy as annealing temperature increased. X-ray photoelectron spectroscopy analysis showed that IB irradiation resulted in oxidation of HfZnO surfaces, which caused the LCs to be oriented more uniformly. The best electro-optical characteristics observed corresponded to the annealing temperature of 200°C. The low optimal annealing temperature for fabricating the HfZnO films suggested that this material has remarkable potential for LCD applications.
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