AlGaN Resonant Tunneling Diodes Grown by rf-MBE

Abstract

AlGaN resonant tunneling diodes (RTD) have been successfully grown by molecular beam epitaxy. Two kinds of RTD samples were fabricated; one is a double barrier type RTD which has 1 nm AIN barriers and a 0.75 nm GaN well, and the other is a superlattice barrier type RTD which has six 1 nm AlN barriers and five 1 nm GaN wells. The negative differential resistance (NDR) effect in the current-voltage characteristics was clearly observed at room temperature. For the double barrier RTD sample, the NDR was observed at 2.4 V with a peak current density of 930 mA/cm 2 and a peak-to-valley ratio of 3.1. For the superlattice barrier RTD sample, the NDR was observed at 1.6 V. The peak current density and peak-to-valley ratio were 142 A/cm 2 and 9.7, respectively.