Abstract
AlGaInP light-emitting diode (LED) with a GaP/In0.5Ga0.5P modulation-doped superlattice was grown by metal organic chemical vapor deposition (MOCVD). The luminous intensity was increased by a factor of 1.16 at 20 mA and of 1.5 at 100 mA with the benefit of the modulation-doped superlattice. The enhanced current-spreading ability offered by the modulation-doped superlattice was demonstrated by the analysis of dynamic resistance under different operation voltage. In addition, the superior current spreading also brought about less generation of heat, which can be manifested by the electroluminescence (EL) spectrum with increase of the injection current.
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