Abstract
The low-speed spin-coating method was developed to prepare uniform and interconnected silver nanowires (AgNWs) film with the transmittance of 95% and sheet resistance of 20Ω/sq on glass, which was comparable to ITO. The fitting value of σdc/σop of 299.3 was attributed to the spin-coating process. Advantages of this solution-processed AgNW film on AlGaInP light-emitting diodes (LEDs) as transparent conductive layer were explored. The optical output power enhanced 100%, and the wavelength redshift decreased from 12 to 3 nm, which indicated the AgNW films prepared by low-speed spin-coating possessed attractive features for large-scale TCL applications in optoelectronic devices.
Highlights
Transparent conductive layer (TCL) is crucial for lightemitting diodes (LEDs) which spread the carriers far away from the opaque electrodes to enhance the quantum efficiency and improve the efficiency droop effect [1,2,3]
Indium-doped tin oxide (ITO) material is widely used in LED field with the sheet resistance Rs of 10 to 30 Ω/sq and optical transmittance T of 90%, which are two important figures of merit (FoM) to facilitate to describe the performance of TCLs [4]
Due to the large inter-junction resistance of carbon nanotubes (CNTs) film caused by mixture of metallic and semiconducting properties, the sheet resistance of CNT film is 200 to 1,000 Ω/sq [9], which is relatively high compared with that of the ITO film
Summary
Transparent conductive layer (TCL) is crucial for lightemitting diodes (LEDs) which spread the carriers far away from the opaque electrodes to enhance the quantum efficiency and improve the efficiency droop effect [1,2,3]. Indium-doped tin oxide (ITO) material is widely used in LED field with the sheet resistance Rs of 10 to 30 Ω/sq and optical transmittance T of 90%, which are two important figures of merit (FoM) to facilitate to describe the performance of TCLs [4]. Due to the large inter-junction resistance of CNT film caused by mixture of metallic and semiconducting properties, the sheet resistance of CNT film is 200 to 1,000 Ω/sq [9], which is relatively high compared with that of the ITO film. Large sheet resistance and obvious degradation of graphene layer under several milliampere current injections restricted its actual application [12]
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