Abstract
For this study PbTe and PbSe thin films have been prepared on silicon substrates with native oxide by Atomic Layer Deposition (ALD) using lead (II)bis(2,2,6,6-tetramethyl-3,5-heptanedionato) (Pb(C11H19O2)2), (trimethylsilyl) telluride ((Me3Si)2Te) and bis-(triethyl silyl) selane ((Et3Si)2Se) as ALD precursors for lead, tellurium and selenium . Instead of classic layer by layer ALD growth the initial ALD nucleation of lead telluride was found to follow the Vollmer-Weber island growth model. We found a strong dependence of the nucleation process on the temperature. In this project, we present the optimized conditions for growing PbTe and PbSe thin films within the ALD process window range of 170 °C to 210 °C and discuss early nanolaminate structures. Results of various physical characterizations techniques and analysis are reported.
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