Abstract
The main objective of the present work is to evaluate and compare the depth profiles of Al and Cu atoms in in-situ doped BaSi2. Furthermore, it is also desired to investigate and compare the carrier concentration of Al-doped as well as Cu-doped BaSi2 films and qualify as a potential dopant-candidate for more efficient solar cells of BaSi2. During the experiment, reactive deposition epitaxy and molecular beam epitaxy were used to develop the samples. X-ray diffraction (XRD) measurements and secondary ion mass spectroscopy (SIMS), were used to determine the structure, depth profile and composition of the already grown films. The electrical properties were characterized by Hall measurement using the van der Pauw method. In case of Al-doped BaSi2 films, it was not encouraging result due to diffusion and segregation of Al in both the surface and BaSi2/Si interface regions. On the other hand, those phenomena were not observed for Cu-doped BaS2 films. Heavily Cu-doped BaSi2 showed n+ conductivity, differently from our prediction.
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