Abstract
We use spin-density-functional theory within an envelope function approach to calculate electronic states in a GaAs/InAs core-shell nanowire pierced by an axial magnetic field. Our fully three-dimensional quantum modeling includes explicitly a description of the realistic cross section and composition of the sample, and the electrostatic field induced by external gates in two different device geometries: gate-all-around and back-gate. At low magnetic fields, we investigate Aharonov-Bohm oscillations and signatures therein of the discrete symmetry of the electronic system, and we critically analyze recent magnetoconductance observations. At high magnetic fields, we find that several charge and spin transitions occur. We discuss the origin of these transitions in terms of different localization and Coulomb regimes, and we predict their signatures in magnetoconductance experiments.
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