Abstract
This work reports the fabrication of AgSbS2 semiconductor films via in-situ gas-solid reaction approach, including sequential solution-deposition of AgNO3 and SbCl3 percursor solutions on mesoporous TiO2 substrates, and subsequent sulfurization of the prepared films at H2S atmosphere. The resultant TiO2/AgSbS2 films show broad spectral absorption ranged from 350 nm to 800 nm with a band gap of 2.01 eV. X-ray photoelectron spectroscopy (XPS) spectra confirm the fabrication of phase-pure AgSbS2 without any impurity. Furthermore, the devices with a structure of fluorine-doped SnO2 (FTO)/TiO2/AgSbS2/Au have been prepared, exhibiting quick interfacial charge transfer and electron injection process with excellent photoresponse and high photostability.
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