Abstract
An agglomeration resistant self-aligned silicide (SALICIDE) process using N2 implantation into TiSi2 films has been developed. The film morphology and the film sheet resistance after high-temperature annealing in an Ar ambient were evaluated as a function of implanted nitrogen doses. High implantation doses of 5×1016 cm-2 or more realized the completely flat film after the annealing; however there is an optimum dose of approximately 1×1016 cm-2 for maintaining the film sheet resistance at its minimum value. This phenomenon could be explained by the fact that the main composition of the film was changed from TiSi2 (C54) to TiN with a 5×1016 cm-2 or more nitrogen implantation and that the TiN film contains Si crystals. A successful application of this technique to a 0.8 µm n-MOS transistor is also presented.
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