Abstract
Ag nanoparticles are embedded in intentionally etched micro-circle p-GaN holes by means of a thermal agglomeration process to enhance the light absorption efficiency in InGaN/GaN multi-quantum-well (MQW) solar cells. The Ag nanoparticles are theoretically and experimentally verified to generate the plasmon light scattering and the localized field enhancement near the MQW absorption layer. The external quantum efficiency enhancement at a target wavelength region is demonstrated by matching the plasmon resonance of Ag nanoparticles, resulting in a Jsc improvement of 9.1%. Furthermore, the Ag-nanoparticle-embedded InGaN solar cell is effectively fabricated considering the carrier extraction that more than 70% of F.F. and 2.2 V of high Voc are simultaneously attained.
Highlights
InGaN has been a promising material for solar cell applications due to its good optical, electrical properties, and a tunable bandgap energy ranging from 0.7 eV (InN) to 3.4 eV (GaN) which can nearly cover the entire range of the solar spectrum [1,2,3,4,5]
The absorption coefficient of InGaN is smaller for a longer wavelength incident light, which leads to a reduced external quantum efficiency in the region of longer wavelength, resulting in a limited power conversion efficiency [10, 13]
More optimization is required to maximize the absorption efficiency, we demonstrated external quantum efficiency (EQE) enhancement at a target wavelength region by matching the plasmon resonance of the Ag nanoparticles
Summary
InGaN has been a promising material for solar cell applications due to its good optical, electrical properties, and a tunable bandgap energy ranging from 0.7 eV (InN) to 3.4 eV (GaN) which can nearly cover the entire range of the solar spectrum [1,2,3,4,5]. To obtain high conversion efficiency in the InGaN-based solar cells, a high-indium (In)content InGaN absorption layer is required to absorb a longer wavelength region in the solar spectrum [7]. Most InGaN-based solar cells adopt an InGaN/GaN multi-quantumwell (MQW) structure including the absorption layer of a high crystalline quality and a high. The absorption coefficient of InGaN is smaller for a longer wavelength incident light, which leads to a reduced external quantum efficiency in the region of longer wavelength, resulting in a limited power conversion efficiency [10, 13]
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