Abstract

Summary High-rate reactive sputtering (HRRS) requires rapid and careful control of the reactive gas partial pressure to achieve high deposition rates and to maintain stoichiometry in the coating. HRRS of TiN was first achieved with feedback control of the N 2 utilizing a differentially pumped mass spectrometer system to sense the N 2 partial pressure. Recently, a new instrument called the optical gas controller (OGC) that operates at sputtering pressures became available for sensing the partial pressure of the gases in the sputtering atmosphere. The OGC was used during the reactive sputtering of TiO x with partial-pressure control, and the TiO x hysteresis loop exhibited a wide negative slope region which is much larger than the one found during the reactive sputtering of TiN x . Partial-pressure control, compared to mass flow control during oxide reactive sputtering, leads to better control of the process and to a 3.5 times higher deposition rate for highly resistive oxide coatings. With partial-pressure control, the anatase form of TiO 2 has been produced with lattice parameters of a 0 = 3.780 A and c 0 = 9.610 A.

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