Advances in 4H-SiC Homoepitaxy for Production and Development of Power Devices

Abstract

AbstractIn this paper we present results of epitaxial layer deposition for production needs using our hot-wall CVD multi-wafer system. This equipment exhibits a capacity of 7x3” wafers per run and can be upgraded to a 6x4” setup. Characteristics of epilayers and reproducibility of the proc-esses are reported. Furthermore, we show recent results of p-type SiC homoepitaxial growth on 3” 4° off-oriented substrates using a single-wafer hot-wall CVD. The dependence of layer prop-erties on growth parameters, doping and thickness uniformity as well as doping memory effects are discussed. For the characterization of epitaxially grown pn-junctions first research grade pin-diodes were fabricated. The p-type emitters were either deposited in the same growth run to-gether with the n-type buffer and drift layers (continuous growth) or the n- and p-layers were grown in two different growth runs (separate growth).