Abstract
This study focuses on the potential of Zinc oxide (ZnO) as a versatile material for photonic and optoelectronic applications, owing to its direct wide bandgap (Eg ≈ 3.175 eV) and significant excitonic energy. ZnO, both in pure and doped forms, exhibits promise in various domains, including solar cells, photoelectrochemical cells, thin film transistors, gas sensors, and nanogenerators. The manuscript delves into the methodologies for producing ZnO:B films, including reactive evaporation, evaporation from two sources, and flash evaporation, each addressing the challenges of achieving the desired film composition and structure. The investigation reveals that the optimized ZnO:B films possess crystalline phases with hexagonal lattice structures, demonstrating significant enhancements in electrical conductivity upon specific annealing treatments. The research underscores the impact of doping and microstructure modifications on the optoelectronic properties of ZnO films, contributing to advancements in semiconductor-based thin films and powders.
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