Abstract
We have developed the advanced metal gate technologies for materializing FinFET CMOS circuits. Using the developed titanium nitride (TiN) gate technologies, we demonstrate the fin-height controlled FinFET CMOS with accurate current matching and the flexible threshold voltage (Vth) asymmetric gate insulator thickness four-terminal (4T) FinFETs with a greatly improved subthreshold slope (S-slope). Furthermore, the newly developed nitrogen gas flow ratio, RN = N2/(Ar + N2), controlled PVD TiN gate and the tantalum (Ta)/molybdenum (Mo) interdiffusion gate technologies to set the symmetrical and lower Vth's for FinFET CMOS are presented.
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