Abstract
The package CURRY offers a wide range of built‐in facilities for 2D device modelling of a large variety of structures such as MOS, bipolar and charge coupled devices. These capabilities will be illustrated on the transport of a charge package in a charge coupled device and on the simulation of the ESD ( Electro‐Static Discharge) in an MOS transistor. The CURRY package can also be used as a high quality kernel to which the user may add his own extensions by adding small pieces of Fortran code. The flexibility of this setup will be shown in the computation of the threshold voltage of an MOS transistor, in the computation of the I‐V curve of a diode in avalanche breakdown and in the computation of the open collector voltage of a bipolar transistor.
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