Abstract
Adsorption of Zn on the GaAs(001)-(2×4) surface has been studied by reflection high-energy electron diffraction (RHEED) and total-reflection-angle x-ray spectroscopy in real time. Adsorption sites of Zn atoms on the (2×4) surface have been determined using rocking-curve analysis of RHEED. The exposure of the (2×4) surface to a Zn beam results in the preferred adsorption of Zn at Ga-vacancy sites in the missing dimer trenches of the (2×4) unit cell. The amount of adsorbed Zn atoms under a Zn flux has been estimated to be ∼0.50 and ∼0.20 monolayers at 200 and 250 °C, respectively.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
