Abstract
Work function changes caused by depositing and spreading of copper were measured on the (110), (100), (111) and (211) faces of tungsten crystal by means of field emission microscope. On (110) and (100) faces the work function for low coverage decreases vith increasing amount of copper deposited, passes through a minimum, then increases foi higher coverage and saturates for a thick layer. On (111) and (211) faces in the low coverage range, the work function increases when the amount of adsorbed copper increases. After reaching a maximum value the changes in work function on these planes have the same character as on (110) and (100) planes, i.e. the work function drops down when the coverage increases, passes through a minimum, increases again and saturates for a thick layer. It is proposed to connect the increase of work function on (111) and (211) faces at low coverage with the loose structure of the substrate surface. The adsorption of copper on these planes causes the smoothing of the crystal surface and this can lead to enhancement of the work function. The performed calibration of the coverage shows that changes in work function are occurring during formation of the first layer of copper adatoms.
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