Abstract
The small-signal a.c. admittance of a p +/n junction with gap states having a continuous distribution in energy is considered. Approximate analytical solutions for both diode conductance and capacitance are derived, through a space charge analysis, in the case of a low density of gap states. Numerical results on the zero-bias admittance are given and discussed for two particular energy distributions: i) Gaussian shapes and ii) exponential tails at the conduction band edge. It is shown that in both cases incomplete admittance spectroscopy experiments may lead to mistake the occurrence of a continuous distribution of gap states for an apparent discrete deep level. Unambiguous criteria to avoid misleading procedures are given and discussed.
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